MLD1N06CL中文资料Single N-Channel Power MOSFET with Voltage Clamp数据手册ONSEMI规格书

描述 Description

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent driver or other applications where a high in-rush current or a shorted load condition could occur. This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

特性 Features

• Current Limiting for short circuit protection.
• Integrated Gate-Source clamping for ESD Protection.

应用 Application

Fuel Injector Driver Incandescent Lamp Driver

简介

MLD1N06CL属于分立半导体产品的晶体管-特殊用途。由制造生产的MLD1N06CL晶体管 - 特殊用途特殊用途晶体管系列产品属于分立晶体管或晶体管阵列，带有或不带有附加的集成无源元件和内部连接，可用于或经调整用于某些狭窄或特定的用途，例如电流镜、平衡串联电容器组或负载切换。