SMARTDISCRETES MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur.

This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and Sensefet technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components. The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

Features

• Pb−Free Package is Available

MLD1N06CL属于分立半导体产品 > 晶体管 - 特殊用途。安森美半导体公司制造生产的MLD1N06CL晶体管 - 特殊用途特殊用途晶体管系列产品属于分立晶体管或晶体管阵列，带有或不带有附加的集成无源元件和内部连接，可用于或经调整用于某些狭窄或特定的用途，例如电流镜、平衡串联电容器组或负载切换。