1.7–2.2 GHz High IP3 Mixer with Integrated LO Amp

Product Description\nThe ML401 high linearity upconverter or downconverter combines a passive GaAs MESFET mixer with an integrated HBT LO driver in a low-cost lead free/green/RoHS-compliant SOIC-8 package. WJ’s ML401 uses patented techniques to realize +31 dBm Input IP3 with 8 dB conversion loss usi • High dynamic range mixer with integrated LO driver\n• +31 dBm Input IP3\n• 8 dB Conversion Loss\n• RF: 1700 – 2200 MHz\n• LO: 1550 – 2150 MHz\n• IF:  50 – 250 MHz\n• 0 dBm Drive Level\n• RoHS-compliant SOIC-8 pkgApplications\n• 2.5/3G GSM/CDMA/WCDMA\n• DCS/PCS-band Mobile Infrastructure;

Qorvo

威讯联合

1.7-2.2 GHz High IP3 Mixer with Integrated LO Amp

文件：301.37 Kbytes 页数：4 Pages

WJCI

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 页数：12 Pages

TECCOR

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process feat

文件：37.45 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：37.33 Kbytes 页数：2 Pages

POLYFET