MJW16212中文资料安森美半导体数据手册PDF规格书

SCANSWITCH™

NPN Bipolar Power Deflection Transistor

For High and Very High Resolution Monitors

The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors.

• 1500 Volt Collector–Emitter Breakdown Capability

• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)

• Application Specific State–of–the–Art Die Design

• Fast Switching:

200 ns Inductive Fall Time (Typ)

2000 ns Inductive Storage Time (Typ)

• Low Saturation Voltage:

0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive

• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES

• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —

8.0 Volts (Min)