80 V, 8 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD44H series • Low collector emitter saturation voltage • Qualified according to AEC-Q101 and recommended for use in automotive application

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80 V, 8 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJPE45H11-Q

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Complementary Power Transistors D2PAK for Surface Mount

Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • F

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ONSEMI

安森美半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

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ONSEMI

安森美半导体

Complementary Power Transistors

文件：97.32 Kbytes 页数：9 Pages

ONSEMI

安森美半导体