100 V, 3 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage Applications • Power management • Load switch • Linear mode voltage regulator •

文件：276.32 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 3 A PNP high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：277.61 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 3 A PNP high power bipolar transistor

PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: MJPE31C

Nexperia

安世

100 V, 3 A PNP high power bipolar transistor

PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: MJPE31C-Q

Nexperia

安世