Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

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ONSEMI

安森美半导体

L1 PASSIVE GPS MICROSTRIP ANTENNA

Description Our patch antenna offerings are perfect for projects with a smaller scope and budget for which high-performance and lower weight is not a primary factor for consideration for the antenna. They are ideal for less demanding applications where extreme performance and battery life can be

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MAXTENA

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

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MOTOROLA

摩托罗拉

RF POWER FET TRANSISTOR

DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. FEATURES INCLUDE: • Bradband performance from HF to 1 GHz • Omnigold™ Metalization System • High Gain, Rugged device.

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ASI