MJE15028中文资料8.0 A, 120 V NPN Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.

特性 Features

• DC Current Gain Specified to 4.0 AmpereshFE = 40 (Min) @ IC = 3.0 AdchFE = 20 (Min) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min)MJE15028, MJE15029VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031
• High Current Gain - Bandwidth ProductfT = 30 MHz (Min) @ IC = 500 mAdc
• TO-220AB Compact Package
• Pb-Free Packages are Available

简介

MJE15028属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJE15028晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。