MJE13005G分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF中文资料

MJE13005G属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由安森美半导体公司制造生产的MJE13005G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。

These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

特性 Features

• VCEO(sus)400 V

• Reverse Bias SOA with Inductive Loads @ TC= 100°C

• Inductive Switching Matrix 2 to 4 A, 25 and 100°C tc@ 3A, 100°C is 180 ns (Typ)

• 700 V Blocking Capability

• SOA and Switching Applications Information

• These Devices are Pb−Free and are RoHS Compliant