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MJD45H11T4-A

Complementarypowertransistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

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MJD45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

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MJD45H11T4G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

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NJVMJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

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NJVMJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@8.0A •F

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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