首页 >MJD3055TSTDTS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGain-BandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS) GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
SILICONEPITAXIALPLANARTRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
Plastic-EncapsulatePowerTransistors Plastic-EncapsulatePowerTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955 APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSiliconPlastic-EncapsulateTransistor Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof2.0WattsofPowerDissipation. •Collector-current10A •Collector-baseVoltage70V •Operatingandst | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TO-220-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●GeneralPurposeandSwitchingApplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU |
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