包装：卷带（TR） 类别：电阻器 通孔式电阻器 描述：RESISTOR AXIAL

OHMITE

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =90A RDS(ON) =3.4mΩ (typical) @ VGS=10V RDS(ON) =6.9mΩ (typical) @ VGS=4.5V ● High density

文件：620.18 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Optoisolator Schmitt Trigger Output

Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is designed for applications requiring electrical isolation, fast response time, noise i

文件：22.91 Kbytes 页数：2 Pages

NTE