MIC5019中文资料Ultra-Small High Side MOSFET Gate Driver with Charge Pump数据手册Microchip规格书

描述 Description

The MIC5019 is a high-side MOSFET gate driver with integrated charge pump designed to switch an N-Channel enhancement type MOSFET control signal in high-side or low-side applications.The MIC5019 operates from a 2.7 V to 9 V supply, and generates gate voltages of 9.2 V from a 3 V supply, and 16 V from a 9 V supply. The device consumes a low 77 µA of supply current and less than 1 µA of supply current in shutdown mode.In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019's output drives the MOSFET gate voltage higher than the supply voltage.The MIC5019 is available in an ultra-small 4-pin 1.2 x 1.2 mm Thin QFN Package and is rated for -40°C to +125°C junction temperature range.

特性 Features

• 4-pin 1.2 x 1.2 mm Thin QFN Package
• 16 V gate drive at VDD = 9 V
• Operates in low and high side configurations
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简介

MIC5019属于集成电路（IC）的栅极驱动器。由制造生产的MIC5019栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。