3A, Low Voltage Low Dropout Regulator

文件：2.50133 Mbytes 页数：24 Pages

MICROCHIP

微芯科技

BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A

文件：118.65 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

The RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

文件：138.42 Kbytes 页数：4 Pages

MACOM

The RF Line Controlled ?쏲??Broadband Power Transistor 100W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 V, 500 MHz characteristics — Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55 (typ.) • Built–in input impedance

文件：202.76 Kbytes 页数：6 Pages

MA-COM