GALLIUM ARSENIDE CATV AMPLIFIER MODULE

The RF Line Gallium Arsenide CATV Amplifier Module Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module Features • Specified for 79–, 112– and 132–Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built–in Input Diode Pr

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Motorola

摩托罗拉

Gallium Arsenide CATV Amplifier Module

Description • 24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built-in Input Diode Protection • GaAs FET Transistor Technology • Uncondi

文件：246.05 Kbytes 页数：4 Pages

Motorola

摩托罗拉

870 MHz 27.6 dB Gain 132-Channel GaAs CATV Amplifier Module

OverviewReplaced by MHW9267AN. There are no form, fit or function changes with this part replacement. Description24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler Amplifier Module\n ApplicationsCATV Systems Operating in the 47 to 870 MHz Frequency Range\n Output Stage Amplifier in Optica \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Higher Output Capacity\n\n•Built–in Input Diode Protection\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions\n\n•Output Port Ring Wave Protection;

恩XP

870 MHz 27.6 dB Gain 132-Channel GaAs CATV Amplifier Module

OverviewPart removed from active portfolio. Possible Replacement Part: None. \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Higher Output Capacity\n\n•Built–in Input Diode Protection\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions\n\n•Output Port Ring Wave Protection;

恩XP

870 MHz 27.6 dB Gain 132-Channel GaAs CATV Amplifier Module

OverviewPart removed from active portfolio. Possible Replacement Part: None. \n•Specified for 79–, 112– and 132–Channel Loading\n\n•Excellent Distortion Performance\n\n•Higher Output Capacity\n\n•Built–in Input Diode Protection\n\n•GaAs FET Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions\n\n•Output Port Ring Wave Protection;

恩XP