High Ouput Power Doubler 750 MHz CATV Amplifier

High Ouput Power Doubler 750 MHz CATV Amplifier • Specified for 77 and 110–Channel Performance • Broadband Power Gain - @ f = 40–750 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transistors • Composite Triple Be

文件：54.13 Kbytes 页数：2 Pages

Motorola

摩托罗拉

CATV Amplifier Module

Description • 24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier Module • Replaced MHW7205CL. There are no form, fit or function changes with this part replacement. • RoHS Compliant Features • Specified for 77- and 110-Channel Loading • Lower DC Current Requirements • Excell

文件：71.42 Kbytes 页数：4 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

750 MHz, 20.2 dB Gain, 24 V 110-Channel CATV Amplifier Module

OverviewMHW7205C removed from active portfolio. Possible Replacement Part: MHW7205CLN. Description24 Vdc Supply, 40 to 750 MHz, CATV Forward Power Doubler Amplifier\n ApplicationsCATV Systems Operating in the 40 to 750 MHz Frequency Range\n Output Stage Amplifier in Optical Nodes, Line Extenders and \n•Specified for 77– and 110–Channel Loading\n\n•Excellent Distortion Performance\n\n•Silicon Bipolar Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions;

恩XP

750 MHz, 20.2 dB Gain, 24 V 110-Channel CATV Amplifier Module

OverviewMHW7205CLN removed from active portfolio. Possible Replacement Part: None. \n•Specified for 77– and 110–Channel Loading\n\n•Lower DC Current Requirements\n\n•Excellent Distortion Performance\n\n•Excellent DC Current Stability over Temperature\n\n•Silicon Bipolar Transistor Technology\n\n•Unconditionally Stable Under All Load Conditions;

恩XP

750 MHz, 20.2 dB, 24 V 110-Channel High Output Mirror Power Doubler CATV Amplifier

Overview MHW7205CR removed from active portfolio.Possible Replacement Part: None. \n•Specified for 77 and 110–Channel Performance\n•Broadband Power Gain — @ f = 40 – 750 MHz\n\t   Gp = 20.2 dB (Typ)\n•Broadband Noise Figure\n\t   NF = 6.2 dB (Typ) @ 750 MHz\n•All Gold Metallization\n•7 GHz  fT Ion–Implanted Transistors\n•Composite Triple Beat — @ 110–Channel Loading\n\t   CTB = –;

恩XP