2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band. • High gain simplifies layout and reduced PCB area compared to a discrete design\n• Qualified up to a maximum of 32 VDD operation\n• On-chip input and interstage matching (50 ohm input)\n• Integrated quiescent current temperature compensation with enable/disable function\n• Integrated ESD protection;

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