MHPA21010数据手册恩XP中文资料规格书

描述 Description

Overview Replacedby MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. The MHPA21010 is designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

特性 Features

•Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts,
IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels
at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH.

•Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing

•Power Gain: 23.7 dB Min (@ f = 2140 MHz)

•Excellent Phase Linearity and Group Delay Characteristics

•0.2 dB Typical Gain Flatness

•Ideal for Feedforward Base Station Applications