800 - 960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier

OverviewMHL9236N removed from active portfolio. Possible Replacement Part: None. \n•Third Order Intercept: 47 dBm Typ\n\n•Power Gain: 30.5 dB Typ (@ f = 880 MHz)\n\n•Input and Output VSWR ≤ 1.5:1\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•Ideal for Feedforward Base Station Applications\n\n•For Use in TDMA, CDMA, QPSK or Analog Systems\n\n•N Suffix Indicate;

恩XP

Cellular Band RF Linear LDMOS Amplifier

文件：75.76 Kbytes 页数：5 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier

OverviewMHL9236NN removed from active portfolio. Possible Replacement Part: None. \n•Third Order Intercept: 47 dBm Typ\n\n•Power Gain: 30.5 dB Typ (@ f = 880 MHz)\n\n•Input and Output VSWR ≤ 1.5:1\n\n•Excellent Phase Linearity and Group Delay Characteristics\n\n•Ideal for Feedforward Base Station Applications\n\n•For Use in TDMA, CDMA, QPSK or Analog Systems\n\n•RoHS Compliant;

恩XP

GALLIUM ARSENIDE CATV AMPLIFIER MODULE

The RF Line Gallium Arsenide CATV Amplifier Module Description • 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module Features • Specified for 79–, 112– and 132–Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technolog

文件：271.08 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

8-Channel Strain Gage Modules

文件：479.21 Kbytes 页数：5 Pages

NI

恩艾

8-Channel Strain Gage Modules

文件：418.45 Kbytes 页数：10 Pages

NI

恩艾