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MH4S64BBKG-7L中文资料PDF规格书
MH4S64BBKG-7L规格书详情
DESCRIPTION
The MH4S64BBKG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.
This is a socket type - memory modules, suitable for easy interchange or addition of modules.
FEATURES
• Utilizes industry standard 4M x 16 Synchronous DRAMs TSOP and industry standard EEPROM in TSSOP
• 144-pin (72-pin dual in-line package)
• single 3.3V±0.3V power supply
• Clock frequency 100MHz(max.)
• Fully synchronous operation referenced to clock rising edge
• 4 bank operation controlled by BA0,1(Bank Address)
• /CAS latency- 2/3(programmable)
• Burst length- 1/2/4/8/Full Page(programmable)
• Burst type- sequential / interleave(programmable)
• Column access - random
• Auto precharge / All bank precharge controlled by A10
• Auto refresh and Self refresh
• 4096 refresh cycle /64ms
• LVTTL Interface
APPLICATION
main memory or graphic memory in computer systems
产品属性
- 型号:
MH4S64BBKG-7L
- 制造商:
MITSUBISHI
- 制造商全称:
Mitsubishi Electric Semiconductor
- 功能描述:
268435456-BIT(4194304 - WORD BY 64-BIT)SynchronousDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
询价 |