MH32V725BST-6中文资料三菱电机数据手册PDF规格书

DESCRIPTION

The MH32V725BST is 33554432-word x 72-bit dynamic ram stacked structural module. This consist of thirty-six industry standard 16M x 4 dynamic RAMs in TSOP and two industry standard input buffer in TSSOP.

The mounting of TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.

This is a socket-type memory module ,suitable for easy interchange or addition of module.

FEATURES

• Utilizes industry standard 16M x 4 RAMs SOJ and industry standard input buffer in TSSOP

• 168-pin (84-pin dual dual in-line package)

• Single 3.3V(± 0.3V) supply operation

• Low stand-by power dissipation . . . . . . . . . . 135.7mW(Max)

• Low operation power dissipation

MH32V725BST -5 . . . . . . . . . . . . . . . . . . 14.96W(Max)

MH32V725BST -6 . . . . . . . . . . . . . . . . . . 13.66W(Max)

• All input are directly LVTTL compatible

• All output are three-state and directry LVTTL compatible

• Includes(0.22 uF x 38) decoupling capacitors

• 4096 refresh cycle every 64ms (CBR Ref)

8192 refresh cycle every 64ms (RAS Only Ref,Normal R/W)

• Hyper-page mpde,Read-modify-write,/CAS before /RAS refresh, Hidden refresh capabilities

• JEDEC standard pin configration & Buffered PD pin

• Buffered input except /RAS and DQ

• Gold plating contact pads

APPLICATION

Main memory unit for computers , Microcomputer memory