MH16V645BWJ-6中文资料三菱电机数据手册PDF规格书

DESCRIPTION

The MH16V645BWJ is 16777216-word x 64-bit dynamic ram module. This consist of sixteen industry standard 16M x 4 dynamic RAMs in SOJ and one industry standard EEPROM in TSSOP.

The mounting of SOJs and TSSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required.

This is a socket-type memory module ,suitable for easy interchange or addition of module.

FEATURES

• Utilizes industry standard 16M x 4 RAMs in SOJ and industry

• standard EEPROM in TSSOP

• 168-pin (84-pin dual dual in-line package)

• Single +3.3V(±0.3V) supply operation

• Low stand-by power dissipation

28.8mW(Max) . . . . . . . . . . . . . . . . . . . LVCMOS input level

• Low operation power dissipation

MH16V645BWJ -5 . . . . . . . . . . . . . . . . . . 5.76W(Max)

MH16V645BWJ -6 . . . . . . . . . . . . . . . . . . 5.19W(Max)

• All input are directly LVTTL compatible

• All output are three-state and directly LVTTL compatible

• Includes(0.22uF x 16) decoupling capacitors

• 4096 refresh cycle every 64ms

• Hyper-page mode,Read-modify-write, /CAS before /RAS refresh,Hidden refresh capabilities

• Gold plating contact pads

APPLICATION

Main memory unit for computers , Microcomputer memory