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MH16S64APHB-6中文资料三菱电机数据手册PDF规格书
MH16S64APHB-6规格书详情
DESCRIPTION
The MH16S64APHB is 16777216 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 16Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP.
The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory are required.
This is a socket type - memory modules, suitable for easy interchange or addition of modules.
FEATURES
• Utilizes industry standard 16M x 8 Sy nchronous DRAMs TSOP and industry standard EEPROM in TSSOP
• 168-pin (84-pin dual in-line package)
• single 3.3V±0.3V power supply
• Max. Clock frequency -6:133MHz,-7,8:100MHz
• Fully synchronous operation referenced to clock rising edge
• 4 bank operation controlled by BA0,1(Bank Address)
• /CAS latency- 2/3(programmable)
• Burst length- 1/2/4/8/Full Page(programmable)
• Burst type- sequential / interleave(programmable)
• Column access - random
• Auto precharge / All bank precharge controlled by A10
• Auto refresh and Self refresh
• 4096 refresh cycle /64ms
• LVTTL Interface
• Discrete IC and module design conform to PC100/PC133 specification.
APPLICATION
PC main memory
产品属性
- 型号:
MH16S64APHB-6
- 制造商:
MITSUBISHI
- 制造商全称:
Mitsubishi Electric Semiconductor
- 功能描述:
1,073,741,824-BIT(16,777,216 - WORD BY 64-BIT)Synchronous DRAM