PG1018

2AMP/NPN-PNPPirgosiliconplanarpowertransistors

GLASSPASSIVATEDJUNCTIONPLASTICRECTIFIER(VOLTAGE160Volts4Watt90MHzCURRENT-2.0Amperes)

PHN1018

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinasurfacemountingplasticpackageusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Low-profilesurfacemountpackage •Logiclevelcompatible A

PIC1018SCL

INFRAREDRECEIVERMODULE

PIC-1018SCL

INFRAREDRECEIVERMODULE

PIC-1018SMB

INFRAREDRECEIVERMODULE

[Waitrony] 1.Features: ➤Miniaturesize ➤Built-inexclusiveIC ➤Widehalfangle&longreceptiondistance ➤Goodnoise-proofcapability ➤Highimmunityagainstambientlight ➤HighprotectionabilitytoEMI ➤Sideview ➤Mesh ➤Widevoltageoperating:2.4V~6.5V 2.Applications

PMA1018

PrecisionMaskingTape-18mm

Features&Benefit: Precise&intricatemasking Nopaintbleedorannoyingpaintlines U.V.protectedformaskingindirectsunlight 18mmwidth 18mlength

PT1018

DIODEMODULE100A/800V

QPD1018

500W,50V,2.7??3.1GHz,GaNRFIMFET

QPD1018

500W,50V,2.7–3.1GHz,GaNRFIMFET

KeyFeatures •Frequency:2.7to3.1GHz •OutputPower(P3dB)1:575W •LinearGain1:17.7dB •TypicalPAE3dB 1:67.9 •OperatingVoltage:50V •Lowthermalresistancepackage •Pulsecapable

QPD1018EVB

500W,50V,2.7??3.1GHz,GaNRFIMFET