首页>MGJ1D121505SC>规格书详情
MGJ1D121505SC中文资料村田数据手册PDF规格书
MGJ1D121505SC规格书详情
Optimised bipolar output voltages for IGBT/
Mosfet, SiC & GaN gate drives
Reinforced insulation to UL62368-1
recognised
ANSI/AAMI ES60601-1, 1 MOPP/2 MOOPs
pending
5.2kVDC isolation test voltage ‘Hi Pot Test’
Ultra low isolation capacitance
5V, 12V, 15V & 24V inputs
6V/-3V, +15V/-3V, +15V/-5V, +15V/-9V,
18V/-2.5V & +20V/-5V outputs
Operation to 105°C
Characterised CMTI >200kV/uS
Continuous barrier withstand voltage
2.4kVDC
Characterised partial discharge performance
