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MGFC40V5258_04中文资料三菱电机数据手册PDF规格书
MGFC40V5258_04规格书详情
DESCRIPTION
The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 32 (TYP.) @ f=5.2 - 5.8GHz
APPLICATION
item 01 : 5.2 - 5.8 GHz band power amplifier
item 51 : 5.2 - 5.8 GHz band digital radio communication
产品属性
- 型号：
MGFC40V5258_04
- 制造商：
MITSUBISHI
- 制造商全称：
Mitsubishi Electric Semiconductor
- 功能描述：
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
