MG150Q2YS40中文资料Silicon N Channel IGBT GTR Module数据手册Toshiba规格书

描述 Description

High Power Switching applications
Motor Control ApplicationsHigh input impedance
High speed : tf = 0.5µs (max)
                 trr = 0.5µs (max)
Low saturation voltage
                : VCE (sat) = 4.0V (max)
Enhancement-mode
Includes a complate half bridge in one package.
The electrodes are isolated from case.