GUNN Diodes Cathode Heat Sink

文件：210.66 Kbytes 页数：4 Pages

MICROSEMI

美高森美

P1dB=42.0dBm at 10.7GHz to 11.7GHz

FEATURES • BROAD BAND INTERNALLY MATCHED FET • HIGH POWER P1dB= 42.0dBm at 10.7GHz to 11.7GHz • HIGH GAIN G1dB= 7.0dB at 10.7GHz to 11.7GHz • ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 30.0dBm Single Carrier Level • HERMETICALLY SEALED PACKAGE

文件：482.86 Kbytes 页数：4 Pages

TOSHIBA

东芝

X,Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31(Typ.) ・Broad Band: 10.7

文件：202.51 Kbytes 页数：5 Pages

EUDYNA

CHO-STRAP INSULATED GROUND STRAP

文件：37.19 Kbytes 页数：1 Pages

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