Multiple Small-Signal Transistors

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Multiple Small-Signal Transistors

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30 W 925.960 MHz RF POWER AMPLIFIER

The RF Line UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires 60 mW of RF input power. • Specified 26 Volt and 25 °C Characteristics:

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Infrared LED

Infrared LED

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