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文件：396.25 Kbytes 页数：5 Pages

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High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

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文件：140.07 Kbytes 页数：3 Pages

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统懋