4 MEG x 16 EDO DRAM

[MEMPHIS] GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are

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MICRONE/微盟
TO-220F

MICRONE/微盟

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IXYS

IXYS

艾赛斯

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IXYS
模块

IXYS

艾赛斯

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MICRONE/微盟
SOP14

MICRONE/微盟

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