MDSGN-750ELMV中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at ELM pulse format across the 1030 to 1090 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor is specifically designed for Mode-S ELM Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.  ROHS, PB Free

简介

MDSGN-750ELMV属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的MDSGN-750ELMV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。