isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：364.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)

文件：1.05144 Mbytes 页数：6 Pages

MGCHIP

400V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)

文件：871.45 Kbytes 页数：7 Pages

MGCHIP

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司