isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

无锡固电

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：746.96 Kbytes 页数：6 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：741.97 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：1.18111 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：1.18111 Mbytes 页数：8 Pages

MGCHIP