MDE6IC7120NR1中文资料飞思卡尔数据手册PDF规格书

The MDE6IC7120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 768 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

• Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2A = 550 mA, VG2B = 2.3 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 104 Watts CW Output Power (2 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 120 Watts CW Pout

• Typical Pout @ 1 dB Compression Point 120 Watts CW

特性 Features

• Production Tested in a Symmetrical Doherty Configuration

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel