Power Diode Module MDC100 series are designed for various Rectifier circuits

文件：83.46 Kbytes 页数：3 Pages

YANGJIE

扬杰电子

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136-175 MHz band. FEATURES: • 175 MHz 12.5 V • Internal Input Matchin

文件：17.87 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VLB100-12 is Designed for FEATURES: • Omnigold™ Metalization System

文件：18.1 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VMB100-12 is Designed for FEATURES: • Omnigold™ Metalization System

文件：17.84 Kbytes 页数：1 Pages

ASI