首页 >MDC0531E>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

N0531N

N-channelMOSFET55V,180A,1.9mΩ

Features •Lowon-stateresistance:RDS(on)=1.9mΩmax.(VGS=10V,ID=90A) •LowCiss:Ciss=13000pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±180A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RCLAMP0531T

Ultra-LowCapacitance1-LineESDprotection

SEMTECH

Semtech Corporation

RCLAMP0531T

ULTRALOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

RCLAMP0531T

Ultra-smallpackage(1.0x0.6x0.4mm)

Description RailClampisanultralowcapacitanceTransientVoltage Suppressor(TVS)designedtoprotecthighspeeddata interfaces.Thisdevicehasbeenspecificallydesignedto protectsensitivecomponentswhichareconnectedtohighspeed dataandtransmissionlinesfromover-voltage cause

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RCLAMP0531T.TCT

Ultra-smallpackage(1.0x0.6x0.4mm)

Description RailClampisanultralowcapacitanceTransientVoltage Suppressor(TVS)designedtoprotecthighspeeddata interfaces.Thisdevicehasbeenspecificallydesignedto protectsensitivecomponentswhichareconnectedtohighspeed dataandtransmissionlinesfromover-voltage cause

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

RClamp0531T.TCT

Ultra-LowCapacitance1-LineESDprotection

SEMTECH

Semtech Corporation

RCLAMP0531TQ

Ultra-LowCapacitance1-LineESDprotection

SEMTECH

Semtech Corporation

RCLAMP0531TQTCT

Ultra-LowCapacitance1-LineESDprotection

SEMTECH

Semtech Corporation

RCLAMP0531Z

UltraSmallRClamp1-LineESDprotection

SEMTECH

Semtech Corporation

RCLAMP0531Z

1-LineUltraLowCapacitanceBi-directionalTVSDiode

Features Ultrasmallpackage:0.6x0.3x0.3mm Ultralowcapacitance:0.25pFtypical Ultralowleakage:nAlevel Lowoperatingvoltage:5V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarg

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

详细参数

  • 型号:

    MDC0531E

  • 制造商:

    MagnaChip

  • 功能描述:

    Common-Drain N-Channel Trench MOSFET 24V, 8A, 23m

  • 功能描述:

    Common-Drain N-Channel Trench MOSFET 24V, 8A, 23m?

供应商型号品牌批号封装库存备注价格
MAGNACHIP
2016+
TSSOP8
4415
只做原装,假一罚十,公司可开17%增值税发票!
询价
MAG
2023+
TSSOP-8
53500
正品,原装现货
询价
MAGNACH
2016+
TSSOP8
6528
原装现货假一赔十
询价
MAGNACH
2020+
TSSOP-8
200
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MAGNACHI
23+
TSSOP8
2936
原装环保房间现货假一赔十
询价
MAGNACHIP/美格纳
23+
TSSOP8
50000
全新原装正品现货,支持订货
询价
MAGNACH
23+
TSSOP8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MAGNACHIP/美格纳
23+
TSSOP8
9990
原装正品,支持实单
询价
MAGNACHIP/美格纳
TSSOP8
125000
一级代理原装正品,价格优势,长期供应!
询价
MAGNACHIP/美格纳
24+
NA/
187
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多MDC0531E供应商 更新时间2025-5-20 8:31:00