RF LDMOS Wideband Integrated Power Amplifiers

文件：351.21 Kbytes 页数：19 Pages

恩XP

RF LDMOS Wideband Integrated Power Amplifiers

文件：351.21 Kbytes 页数：19 Pages

恩XP

1805-2170 MHz，1.3 W平均值，28 V单载波W-CDMA LDMOS宽带射频集成功率放大器

The MD7IC2012NR1 and MD7IC2012GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 2170 MHz. This multi-stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation formats. • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• Designed for Digital Predistort;

恩XP

CDIP-40

INTEL

英特尔

上传：君宇国际实业有限公司

DIP

INTEL

英特尔

上传：深圳市勤思达科技有限公司