RF LDMOS Wideband Integrated Power Amplifiers

文件：673.07 Kbytes 页数：18 Pages

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RF LDMOS Wideband Integrated Power Amplifiers

文件：673.07 Kbytes 页数：18 Pages

恩XP

1805-1880 MHz，30 W平均值，28 V单W-CDMA LDMOS射频宽带集成功率放大器

The MD7IC18120NR1 and MD7IC18120GNR1 wideband integrated circuits are designed with on-chip matching that make them usable from 1805 to 1880 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VG2A = 1.7 Vdc, Pout = 30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)PAE(%)Output PA;

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CDIP-40

INTEL

英特尔

上传：君宇国际实业有限公司

DIP

INTEL

英特尔

上传：深圳市勤思达科技有限公司