MD18211数据手册MERAKI中文资料规格书

描述 Description

The MD18211 high-frequency gate driver includes a 120-V bootstrap diode, and is designed to drive both high-side and low-side N-Channel MOSFETs with maximum control flexibility of independent inputs. The inputs can handle -10V to 20V DC, which increases robustness against ringing from gate transformer and/or parasitic inductance of long routing traces. High side driver is designed to be protected from negative spikes at HS pin as low as -18V, caused by parasitic inductance and stray capacitance. 15ns rising and 14ns falling propagation delay allows the systems operating at high frequency with less delay matching variations. The MD18211 is offered in 4mm x 4mm DFN-8  packages。

特性 Features

• Drives Both High-Side and Low Side N-Channel MOSFETs with Independent Inputs
• Bootstrap Supply Voltage up to 120V DC
• 4-A Source and Sink Output Peak Currents
• 4-ns Rise and Fall Time with 1000-pF Load
• Input Pins Can Tolerate -10V to +20V, and are Independent of Supply Voltage Range
• TTL Compatible Inputs
• 8V to 17V VDD Operating Range, 20V ABS MAX
• Fast Propagation Delay Times
• Excellent Propagation Delay Matching (1ns Typical)
• Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver
• Available in both 4mm x 4mm and 3mm x 3mm DFN-8 Packages
• Specified from -40°C to 140°C

应用 Application

Power Supplies for Telecom, Datacom, and48V to 72V Battery Powered Systems
Half-Bridge Applications and Full-Bridge Converters
Push-Pull Converters
High Voltage Synchronous Buck Converters
Two-Switch Forward Converters
Active Clamp Forward Converters
Class-D Audio Amplifiers