MD1210数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1210 can operate from 1.2V to 5.0V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced, even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation. VDD1, VDD2, and VH should be connected to the positive supply voltage, and VSS1, VSS2, and VL should be connected to 0V or to Ground. The GND pin is the logic control input signal digital ground. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Secondly, when OE is low, the outputs are disabled, with the A output high and the B output low. This assists in properly pre-charging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.

特性 Features

6ns rise and fall time with 1000pF load
2.0A peak output source/sink current
1.2V to 5.0V input CMOS compatible
4.5V to 13V single positive supply voltage
Smartlogic threshold
Low jitter design
Two matched channels
Outputs can swing below ground
Low inductance package
Thermally-enhanced package

简介

MD1210属于集成电路（IC）的栅极驱动器。由制造生产的MD1210栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。