MCZ33285EFR2中文资料飞思卡尔数据手册PDF规格书

Dual High-Side TMOS Driver

A single input controls the 33285 in driving two external high-side N-Channel TMOS power FETs controlling incandescent or inductive loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is possible. The 33285 contains a common internal charge pump used to enhance the Gate voltage of both FETs.

特性 Features

• PWM Capability

• Power TMOS Number One (OUT1) Short-Circuit Detection and Short-Circuit Protection

• Voltage Range 7.0 V ≤ 40 V

• Extended Temperature Range from -40°C ≤ 125°C

• Load Dump Protected

• Overvoltage Detection and Activation of OUT2 During Overvoltage

• Single Input Control for Both Output Stages

• Capacitor Value of 100 nF Connected to Pin CP

• Analog Input Control Measurement Detection

• OUT1 LOAD Leakage Measurement Detection

• Pb-Free Packaging Designated by Suffix Code EF