首页 >MCU12P06-TP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGate | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PowerFieldEffectTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
60VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-10V,ID@-6A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-10V,ID@-6A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VP-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@-10V,ID@-6A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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