MCTV35P60F1D中文资料INTERSIL数据手册PDF规格书

Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss.

MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. This device features a discrete anti-parallel diode that shunts current around the MCT in the reverse direction without introducing carriers into the depletion region.

Features

• 35A, -600V

• VTM = -1.35V (Max) at I = 35A and +150°C

• 800A Surge Current Capability

• 800A/µs di/dt Capability

• MOS Insulated Gate Control

• 50A Gate Turn-Off Capability at +150°C

• Anti-Parallel Diode