13.56 MHz Read/Write Passive RFID Device

DESCRIPTION OF DEVICE FEATURES The MCRF450/451/452/455 is a contactless read/write passive RFID device that is optimized for 13.56 MHz RF carrier signal. The device needs an external LC resonant circuit to communicate wirelessly with the Interrogator. The device is powered remotely by rectif

文件：1.17287 Mbytes 页数：50 Pages

MICROCHIP

微芯科技

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55

文件：75.23 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

文件：228.17 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt

文件：50.48 Kbytes 页数：2 Pages

ZETEX