MCM69L736AZP10.5R中文资料摩托罗拉数据手册PDF规格书

The MCM69L736A/818A is a 4M synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69L818A (organized as 256K words by 18 bits) and the MCM69L736A (organized as 128K words by 36 bits) are fabricated in Motorola’s high performance silicon gate BiCMOS technology.

• Byte Write Control

• Single 3.3 V +10, – 5 Operation

• HSTL — I/O (JEDEC Standard JESD8–6 Class I)

• HSTL — User Selectable Input Trip–Point

• HSTL — Compatible Programmable Impedance Output Drivers

• Register to Latch Synchronous Operation

• Asynchronous Output Enable

• Boundary Scan (JTAG) IEEE 1149.1 Compatible

• Differential Clock Inputs

• Optional x18 or x36 Organization

• MCM69L736A/818A–7.5 = 7.5 ns

MCM69L736A/818A–8.5 = 8.5 ns

MCM69L736A/818A–9.5 = 9.5 ns

MCM69L736A/818A–10.5 = 10.5 ns

• 119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package