High-speed switching diode

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WINNERJOIN

永而佳

开关二极管

ST

意法半导体

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

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NTE

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

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SHARPSharp Corporation

夏普

Mini-Flat Package, High Sensitivity Photocoupler

Mini-Flat Package, High Sensitivity Photocoupler ■Features 1. High current transfer ratio (CTR : MIN. 600 at IF= 1mA, VCE=2V) 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our conventional DIP type by as fa

文件：54.17 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普