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MCGPR63V477M13X26

General Purpose Aluminium Electrolytic Capacitors 85°C

Features: • Wide CV value range for general purpose • Safely vent construction products, GPR series are guaranteed 2,000 hours at 85°C

文件:339.39 Kbytes 页数:6 Pages

MULTICOMP

易络盟

MCGPR63V477M13X26

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. Features  Designed for Wide Instantaneous Bandwidt

文件:468.68 Kbytes 页数:15 Pages

恩XP

恩XP

MCGPR63V477M13X26

RF Power LDMOS Transistors

文件:634.77 Kbytes 页数:20 Pages

恩XP

恩XP

MCGPR63V477M13X26

Airfast RF Power LDMOS Transistor

文件:427.51 Kbytes 页数:20 Pages

恩XP

恩XP

MCGPR63V477M13X26

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

文件:424.62 Kbytes 页数:12 Pages

恩XP

恩XP

MCGPR63V477M13X26

RF Power LDMOS Transistor

文件:690.68 Kbytes 页数:8 Pages

恩XP

恩XP

MCGPR63V477M13X26RH

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件:385.37 Kbytes 页数:17 Pages

恩XP

恩XP

MCGPR63V477M13X26-RH

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

Features  High terminal impedances for optimal broadband performance  Advanced high performance in--package Doherty  Able to withstand extremely high output VSWR and broadband operating conditions

文件:414.55 Kbytes 页数:18 Pages

恩XP

恩XP

MCGPR63V477M13X26-RH

N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件:557.94 Kbytes 页数:16 Pages

恩XP

恩XP

MCGPR63V477M13X26-RH

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz. Features  Designed for wide instantaneous bandwidth ap

文件:502.63 Kbytes 页数:18 Pages

恩XP

恩XP

详细参数

  • 型号:

    MCGPR63V477M13X26

  • 制造商:

    SPC Multicomp

  • 功能描述:

    CAPACITOR ALUM ELECT 470UF 63V RADIAL

供应商型号品牌批号封装库存备注价格
UnitedChemiCon
24+
57420
询价
24+
SMD
5500
一级代理原装现货假一罚十
询价
MULTICOMP
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MULTICOMP
2022+
DIP
79000
原厂代理 终端免费提供样品
询价
原厂
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
询价
Essentra
22+
NA
168
加我QQ或微信咨询更多详细信息,
询价
ROHM/罗姆
24+
NA/
33250
原装现货,当天可交货,原型号开票
询价
ROHM/罗姆
23+
O402
50000
全新原装正品现货,支持订货
询价
ROHM/罗姆
23+
O402
50000
全新原装正品现货,支持订货
询价
ROHM/罗姆
23+
SMD
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多MCGPR63V477M13X26供应商 更新时间2025-12-15 15:30:00