MI957

2xDDR3DIMM,Max.8GB,supportsECC

MLL957A

2.4Vto110VMLLZENERDIODES(1/2Watt)

MLL957B

LEADLESSGLASSZENERDIODESURFACEMOUNT

Features •LeadlessPackageForSurfaceMountTechnology •IdealForHighDensityMounting •VoltageRange6.8To200Volts •HermeticallySealed,DoubleSlugGlassConstruction •MetallurgicallyBondedConstructionAvailableasDashOne. •AvailableinJAN,JTX,JTXV-1toMil-PR

MRF957

NPNSiliconLowNoise,High-FrequencyTransistors

TheRFLine NPNSiliconLowNoise,High-FrequencyTransistors Designedforuseinhighgain,lownoisesmall–signalamplifiers.Thisseriesfeaturesexcellentbroadbandlinearityandisofferedinavarietyofpackages. •FullyImplantedBaseandEmitterStructure •18Finger,1.25MicronGeom

NTE957

IntegratedCircuit3-TerminalAdjustableNegativeVoltageRegulator

Description: TheNTE957isanadjustable3–terminalnegativevoltageregulatorinaTO220typepackagecapableofsupplyinginexcessof–1.5Aovera–1.2Vto–37Voutputrange.Thecircuitdesignhasbeenoptimizedforexcellentregulationandlowthermaltransients.Further,theNTE957features

PP957

PCoscilloscopesandMSOs

Introduction ThePicoScope3000SeriesPCoscilloscopesaresmall,lightandportable,whileofferingthehigh-performancespecificationsrequiredbyengineersinthelaboronthemove. Theseoscilloscopesoffer2or4analogchannels,plusanadditional16digitalchannelsonthemixed-signal

PP957

PicoScope®3000SeriesPCoscilloscopesandMSOs

Features Upto200MHzanalogbandwidth Deepbuffermemoryupto512MS MSOmodelswith16digitalchannels 2or4analogchannels 1GS/sreal-timesampling Fastwaveformupdates Built-inarbitrarywaveformgenerator USB3.0connectedandpowered

PRF957

UHFwidebandtransistor

DESCRIPTION SiliconNPNtransistorinasurfacemount3-pinSOT323package.ThetransistorisprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellulartelephones,cordlessphones,radardetectors,pagersandsatelliteTV-tuners. FEATURES

PRF957

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

PRF957

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoise NF=1.5dBTYP.,@VCE=6V,IC=30mA,f=1GHz •HighGain ︱S21e︱2=12dBTYP.@VCE=6V,IC=30mA,f=1.0GHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforVHF,UHFlownoiseampl