MC74VHC1G135DBVT1G集成电路（IC）的门反相器规格书PDF中文资料

MC74VHC1G135DBVT1G属于集成电路（IC）的门反相器。由安森美半导体公司制造生产的MC74VHC1G135DBVT1G门和反相器逻辑栅极和逆变器系列中的产品对单个逻辑信号执行基本逻辑运算（例如 AND、NOT、OR 等）。与触发器不同，它们不能够存储信息，不会对提供给其输入的信号立即做出响应。虽然早就被集成电路实施形式所取代，以用于实现复杂功能，但分立栅极仍可在仅需要非常简单逻辑功能的情况下使用。

The MC74VHC1G135 is a single gate CMOS Schmitt NAND

trigger with an open drain output fabricated with silicon gate CMOS

technology. It achieves high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining CMOS low power

dissipation.

The internal circuit is composed of three stages, including a buffered

3−state output which provides high noise immunity and stable output.

The input structures provide protection when voltages up to 5.5 V

are applied, regardless of the supply voltage. This allows the device to

be used to interface 5 V circuits to 3 V circuits. Some output structures

also provide protection when VCC = 0 V and when the output voltage

exceeds VCC. These input and output structures help prevent device

destruction caused by supply voltage − input/output voltage mismatch,

battery backup, hot insertion, etc.

特性 Features

• Designed for 2.0 V to 5.5 V VCC Operation

• 4.9 ns tPD at 5 V (typ)

• Inputs/Outputs Over−Voltage Tolerant up to 5.5 V

• IOFF Supports Partial Power Down Protection

• Source/Sink 8 mA at 3.0 V

• Available in SC−88A, SC−74A, TSOP−5, SOT−553, SOT−953 and

UDFN6 Packages

• Chip Complexity < 100 FETs

• NLV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q100

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant